Continuing the well established trend of making bold claims about physical dimensions that have nothing to do with any of the structures in the chip, and the name scales better than the tech.
What they actually deliver is a "nanostack architecture" built with ~5nm features that according to them is comparable to a hypothetical real sub-1nm chip.
It's an impressive achievement nonetheless but it looks like the industry has a few too many marketers.
For silicon, the gate length of a FET has a lower limit somewhere between 10 nm and 15 nm.
The current CMOS manufacturing processes have not reached the limit yet. For making smaller transistors, a transition to other semiconductor materials will be necessary.
The vertical thicknesses of various layers may be of only a few nanometers or even of a fraction of a nanometer, but that does not matter directly for the circuit density.
The supposed node size refers to horizontal dimensions, not to vertical dimensions.
Vertical dimensions of around 1 nanometer or less could be achieved already many decades ago, because they depend on growth speed and on time, not on lithography, like the horizontal dimensions.
The industry should have stopped decades ago to talk about the "size" but they should have characterized a CMOS process by its density, e.g. in logic gates per square mm.
However, an actual concrete number would be disliked by marketing, because they could no longer claim that their "1 nm" process is better than the "2 nm" process of another vendor, if their density is not really better.
It describes density measure where you can compare it to planar transistors from the 28-nanometer (28 nm) node around 2010 to 2011 and before. A "0.7 nm" node has equivalent transistor density as if we could have shrunk standard flat transistor node down to 0.7 nanometers.
Different companies measure it differently too. This was a while ago, but I remember reading that Intel 10nm was more or less close to TSMC 7nm. I'm sure this is still true to varying degrees.
We care about PPA (power, performance, area) and not how large or not-large features actually are. Comparing gate lengths between a 1980s planar transistor and a 2010s 3D FinFET or GAA transistor is obviously nonsense, the relatively aligned node names of the industry actually do make sense as a shortcut here.
Gen Alpha were born since the naming became detached from actual physical size. And parts of Gen Z (before) and Gen Beta (after).
https://morethanmoore.substack.com/p/ibms-announces-07nm-pro...
Never heard of this, care to elaborate?
GF did not pay IBM. IBM paid GF to take the fabs away.
https://www.reuters.com/article/technology/ibm-to-pay-global...
Is there a limit to how small things can go? A single atom?
Is there a physical/molecular limit to Moore's Law?
I am just astonished at the quality of the structure. Not only that, but the quality of the "cut" to then be able to take this picture. I was closely involved in EM imaging more than 30 years ago, this is just wonderful to see such pictures now.
I'm guessing that this is the technology that is developed by Cymer (ASML subsidiary) in California, correct? Is there competing technology? I know xLight is trying to make some inroads on their own version of this EUV tech. I have not heard about any progress though.
> IBM sees a path to production in as early as the next 5 years.
5 years is a long time for a product roadmap, so there are probably some significant unsolved problems remaining, and the timeline depends on whether IBM can solve these problems.
But seeing progress in semiconductor nodes is always a good thing. It has felt quite stagnant these past few years.
What surprised me is that it came from IBM.
Selling a 5 nm vertically stacked chip as equivalent to 0.7 nm
Shades of Watson and other IBM lies.
also, I was expecting to see cfets mentioned.
Otherwise, that chip tech sounds really awesome - at least for the future!